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| XCS05XLVQ100资料 | |
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XCS05XLVQ100 PDF Download |
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File Size : 116 KB
Manufacturer:XILINX Description:As with any semiconductor device, some of the characteristics of HEXFET Power MOSFETs are temperature dependent. For tests in which there is significant heating of the HEXFET Power MOSFET, a low repetition rate should be used. For tests involving a slow transition through the linear region, a damping resistor of at least 10 ohms should be connected in series with the gate, close to the gate lead to prevent oscillations. If frequent testing of MOS-gated devices is expected, the use of a test fixture that plugs directly into the curve tracer would save a significant amount time. Such a fixture is descibed in Section 12. MOS-gated transistors are static sensitive. Wrist straps, grounding mats and other ESD precautions must be followed, as indicated in INT-955. |
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| 1PCS | 100PCS | 1K | 10K | ||
| 价 格 | |||||
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型 号：XCS05XLVQ100 厂 家：XILINX 封 装：QFP 批 号：07+ 数 量：2000 说 明：100%真实库存，原装，部分现货 |
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运 费： 所在地：深圳 新旧程度： |
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| 联系人：陈小姐 |
| 电 话：0755-83605789 |
| 手 机：13428979109 |
| QQ：656259901,307704921 |
| MSN：chenqiongxia18@126.com |
| 传 真：0755-23816523 |
| EMail：656259901@qq.com |
| 公司地址： 广东深圳市福田区华强北（振华路）赛格高科德电子市场A1848室 |
