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| SN75110ADR资料 | |
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SN75110ADR PDF Download |
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File Size : 116 KB
Manufacturer:TI Description:International Rectifiers MEGA RAD HARD technology HEXFETs demonstrate excellent threshold voltage sta- bility and breakdown voltage stability at total radiation doses as high as 1 x 106 Rads (Si). Under identical pre- and post-radiation test conditions, International Rectifiers RAD HARD HEXFETs retain identical electrical specifi- cations up to 1 x 105 Rads (Si) total dose. At 1 x 106 Rads (Si) total dose, under the same pre-dose conditions, only minor shifts in the electrical specifications are observed and are so specified in table 1. No compensation in gate drive circuitry is required. In addition, these devices are capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the MEGA RAD HARD process utilizes International Rectifiers patented HEXFET technology, the user can expect the highest quality and reliability in the industry. RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as volt- age control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, au- dio amplifiers and high-energy pulse circuits in space and weapons environments. |
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| 1PCS | 100PCS | 1K | 10K | ||
| 价 格 | |||||
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型 号：SN75110ADR 厂 家：TI 封 装：SOP14 批 号：07+ 数 量：8000 说 明：100%真实库存，原装，部分现货 |
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运 费： 所在地：深圳 新旧程度： |
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| 联系人：陈小姐 |
| 电 话：0755-83605789 |
| 手 机：13428979109 |
| QQ：656259901,307704921 |
| MSN：chenqiongxia18@126.com |
| 传 真：0755-23816523 |
| EMail：656259901@qq.com |
| 公司地址： 广东深圳市福田区华强北（振华路）赛格高科德电子市场A1848室 |
